FDB12N50TM
Fairchild Semiconductor
English
Part Number: | FDB12N50TM |
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Manufacturer/Brand: | Fairchild (onsemi) |
Part of Description: | POWER FIELD-EFFECT TRANSISTOR, 1 |
Datasheets: |
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RoHs Status: | Lead free / RoHs compliant |
ECAD Model: | |
Payment: | PayPal / Credit Card / T/T |
Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
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Ship From: Hong Kong
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Product Attribute | Attribute Value |
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Vgs(th) (Max) @ Id | 5V @ 250µA |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | D2PAK (TO-263) |
Series | UniFET™ |
Rds On (Max) @ Id, Vgs | 650mOhm @ 6A, 10V |
Power Dissipation (Max) | 165W (Tc) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Package | Bulk |
Product Attribute | Attribute Value |
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Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 1315 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 500 V |
Current - Continuous Drain (Id) @ 25°C | 11.5A (Tc) |
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![]() FDB12N50TMFairchild Semiconductor |
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